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| PMBT4403 features high current (max. 600 ma) low voltage (max. 40 v). applications industrial and consumer switching applications. description pnp switching transistor in a sot23 plastic package. npn complement: pmbt4401. marking type number marking code (1) PMBT4403 * 2t pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot23) and symbol. handbook, halfpage 2 1 3 mam256 top view 2 3 1 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. transistor mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 40 v v ceo collector-emitter voltage open base -- 40 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 600 ma i cm peak collector current -- 800 ma i bm peak base current -- 200 ma p tot total power dissipation t amb 25 c; note 1 - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 500 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = - 40 v -- 50 na i ebo emitter cut-off current i c = 0; v eb = - 5v -- 50 na h fe dc current gain v ce = - 1 v; (see fig.2) i c = - 0.1 ma 30 - i c = - 1ma 60 - i c = - 10 ma 100 - v ce = - 2v i c = - 150 ma 100 300 i c = - 500 ma 20 - v cesat collector-emitter saturation voltage i c = - 150 ma; i b = - 15 ma -- 400 mv i c = - 500 ma; i b = - 50 ma -- 750 mv v besat base-emitter saturation voltage i c = - 150 ma; i b = - 15 ma -- 950 mv i c = - 500 ma; i b = - 50 ma -- 1.3 v c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz - 8.5 pf c e emitter capacitance i c =i c = 0; v eb = - 500 mv; f = 1 mhz - 35 pf f t transition frequency i c = - 20 ma; v ce = - 10 v; f = 100 mhz 200 - mhz switching times (between 10% and 90% levels); (see fig.3) t on turn-on time i con = - 150 ma; i bon = - 15 ma; i boff =15ma - 40 ns t d delay time - 15 ns t r rise time - 30 ns t off turn-off time - 350 ns t s storage time - 300 ns t f fall time - 50 ns PMBT4403 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com |
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